ESD robustness prediction and protection device design in partially depleted SOI technology

P. Raha, J. C. Smith, J. W. Miller, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

In this paper we investigate and develop models for partially-depleted silicon-on-insulator (SOI) (PD-SOI) device failure under EOS/ESD stress. The model and experimental data show that due to increased device self-heating, the second-breakdown current per micron width (It2) for salicided PD-SOI metal-oxide semiconductor field effect transistor (MOSFET)s with Si film thickness of 100 nm is about 50% of that in their bulk counterparts under human body model (HBM-ESD) stress pulses. Furthermore, It2 did not scale with device width. Therefore, ESD protection devices with non-silicided S/D diffusions and source-body tied MOSFETs are investigated for improved ESD protection levels. Compact ESD protection networks using the source-body tied device may have been shown to achieve HBM-ESD protection levels of +3.75 kV (Smith JC, Lien M, Veeraghaven S. An ESD protection circuit for TFSOI technology. International SOI Conf. Proc. 1996. pp. 170-71).

Original languageEnglish (US)
Pages (from-to)1723-1731
Number of pages9
JournalMicroelectronics Reliability
Volume38
Issue number11
DOIs
StatePublished - Jan 1 1998

Fingerprint

Silicon on insulator technology
Silicon
insulators
silicon
predictions
field effect transistors
circuit protection
MOSFET devices
Film thickness
human body
metal oxide semiconductors
Heating
film thickness
breakdown
Networks (circuits)
heating
pulses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

ESD robustness prediction and protection device design in partially depleted SOI technology. / Raha, P.; Smith, J. C.; Miller, J. W.; Rosenbaum, Elyse.

In: Microelectronics Reliability, Vol. 38, No. 11, 01.01.1998, p. 1723-1731.

Research output: Contribution to journalArticle

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