Abstract
A bidirectional SSTL I/O which utilizes an active-biasing technique to achieve enhanced ESD resilience is presented. During an ESD event, each vulnerable transistor has an appropriate bias applied to minimize the peak voltage across gate oxide and drain-source regions. Active-bias control circuits can be substituted for secondary protection to improve circuit performance and ESD reliability.
| Original language | English (US) |
|---|---|
| Title of host publication | Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013 |
| State | Published - Oct 16 2013 |
| Event | 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 - Las Vegas, NV, United States Duration: Sep 8 2013 → Sep 13 2013 |
Publication series
| Name | Electrical Overstress/Electrostatic Discharge Symposium Proceedings |
|---|---|
| ISSN (Print) | 0739-5159 |
Other
| Other | 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 |
|---|---|
| Country | United States |
| City | Las Vegas, NV |
| Period | 9/8/13 → 9/13/13 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
ESD-resilient active biasing scheme for high-speed SSTL I/Os. / Keel, Min Sun; Jack, Nathan; Rosenbaum, Elyse.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013. 2013. 6635906 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ESD-resilient active biasing scheme for high-speed SSTL I/Os
AU - Keel, Min Sun
AU - Jack, Nathan
AU - Rosenbaum, Elyse
PY - 2013/10/16
Y1 - 2013/10/16
N2 - A bidirectional SSTL I/O which utilizes an active-biasing technique to achieve enhanced ESD resilience is presented. During an ESD event, each vulnerable transistor has an appropriate bias applied to minimize the peak voltage across gate oxide and drain-source regions. Active-bias control circuits can be substituted for secondary protection to improve circuit performance and ESD reliability.
AB - A bidirectional SSTL I/O which utilizes an active-biasing technique to achieve enhanced ESD resilience is presented. During an ESD event, each vulnerable transistor has an appropriate bias applied to minimize the peak voltage across gate oxide and drain-source regions. Active-bias control circuits can be substituted for secondary protection to improve circuit performance and ESD reliability.
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UR - http://www.scopus.com/inward/citedby.url?scp=84890458679&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84890458679
SN - 9781585372324
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
ER -