Epitaxially grown single grain boundaries in chalcopyrites

Susanne Siebentritt, Tobias Eisenbarth, Angus Rockett, Jürgen Albert, Peter Schubert-Bischoff, Martha Ch Lux-Steiner

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To allow a specific investigation of grain boundaries with a given orientation we have grown epitaxial grain boundaries of CuGaSe2 by metal organic vapour phase epitaxy (MOVPE). The epitaxy on either side of the grain boundary and the Σ3 character of the grain boundary are shown by electron back-scattering diffraction (EBSD) scans. Scanning electron microscopy (SEM) micrographs show a dense grain boundary. Transmission electron microscopy (TEM) micrographs prove that the grain boundary in the film is the direct continuation of the grain boundary in the substrate. High-resolution TEM (HRTEM) shows that the grain boundary in the film is a twin as well, and thus a Σ3 boundary. This also justifies the use of a classification scheme that is derived for the cubic system for the tetragonal chalcopyrites. Thus by using a Σ3 grain boundary in the cubic GaAs substrate as a template, a Σ3 grain boundary is obtained in the tetragonal CuGaSe2 film.

Original languageEnglish (US)
Article number016004
JournalJournal of Physics Condensed Matter
Issue number1
StatePublished - Jan 10 2007

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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