Epitaxial Strained Germanium p-MOSFETs with HFO ₂ Gate Dielectric and TaN Gate Electrode

Keyphrases

• Gate Dielectric 100%
• Germanium 100%
• Epitaxial 100%
• Gate Electrode 100%
• PMOSFET 100%
• Strained Germanium 100%
• High-k Dielectric 50%
• I-V Characteristics 50%
• Ge Substrate 50%
• Subthreshold Swing 50%
• Low-field Mobility 50%
• Transconductance 50%
• Device Parameters 50%
• On-Silicon 50%
• Gate Leakage 50%
• NMOSFET 50%
• Accurate Extraction 50%
• C-V Characteristics 50%

Engineering

• Gate Dielectric 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Electrode 100%
• Silicon Substrate 33%
• Dielectrics 33%
• Ge Substrate 33%

Material Science

• Dielectric Material 100%
• Germanium 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silicon 33%