Epitaxial Strained Germanium p-MOSFETs with HFO 2 Gate Dielectric and TaN Gate Electrode

A. Ritenour; S. Yu; M. L. Lee; N. Lu; W. Bai; A. Pitera; E. A. Fitzgerald; D. L. Kwong; D. A. Antoniadis

Epitaxial Strained Germanium p-MOSFETs with HFO ₂ Gate Dielectric and TaN Gate Electrode

A. Ritenour, S. Yu, M. L. Lee, N. Lu, W. Bai, A. Pitera, E. A. Fitzgerald, D. L. Kwong, D. A. Antoniadis

Research output: Contribution to journal › Conference article › peer-review

Abstract

Germanium p-MOSFETs with a thin high-k dielectric (EOT-1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (G _m) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.

Original language	English (US)
Pages (from-to)	433-436
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2003
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Epitaxial Strained Germanium p-MOSFETs with HFO 2 Gate Dielectric and TaN Gate Electrode",

abstract = "Germanium p-MOSFETs with a thin high-k dielectric (EOT-1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (G m) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.",

author = "A. Ritenour and S. Yu and Lee, {M. L.} and N. Lu and W. Bai and A. Pitera and Fitzgerald, {E. A.} and Kwong, {D. L.} and Antoniadis, {D. A.}",

year = "2003",

language = "English (US)",

pages = "433--436",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

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TY - JOUR

T1 - Epitaxial Strained Germanium p-MOSFETs with HFO 2 Gate Dielectric and TaN Gate Electrode

AU - Ritenour, A.

AU - Yu, S.

AU - Lee, M. L.

AU - Lu, N.

AU - Bai, W.

AU - Pitera, A.

AU - Fitzgerald, E. A.

AU - Kwong, D. L.

AU - Antoniadis, D. A.

PY - 2003

Y1 - 2003

N2 - Germanium p-MOSFETs with a thin high-k dielectric (EOT-1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (G m) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.

AB - Germanium p-MOSFETs with a thin high-k dielectric (EOT-1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (G m) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0842266606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842266606&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0842266606

SN - 0163-1918

SP - 433

EP - 436

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Epitaxial Strained Germanium p-MOSFETs with HFO ₂ Gate Dielectric and TaN Gate Electrode

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