Abstract
Germanium p-MOSFETs with a thin high-k dielectric (EOT-1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (G m) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.
Original language | English (US) |
---|---|
Pages (from-to) | 433-436 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
State | Published - 2003 |
Externally published | Yes |
Event | IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry