Epitaxial Strained Germanium p-MOSFETs with HFO 2 Gate Dielectric and TaN Gate Electrode

A. Ritenour, S. Yu, M. L. Lee, N. Lu, W. Bai, A. Pitera, E. A. Fitzgerald, D. L. Kwong, D. A. Antoniadis

Research output: Contribution to journalConference articlepeer-review

Abstract

Germanium p-MOSFETs with a thin high-k dielectric (EOT-1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (G m) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.

Original languageEnglish (US)
Pages (from-to)433-436
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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