Epitaxial semiconductor films grown by laser photochemical vapor deposition

J. G. Eden; V. Tavitian; C. J. Kiely

doi:10.1117/12.944386

Epitaxial semiconductor films grown by laser photochemical vapor deposition

J. G. Eden
, V. Tavitian
, C. J. Kiely

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.

Original language	English (US)
Pages (from-to)	26-27
Number of pages	2
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	894
DOIs	https://doi.org/10.1117/12.944386
State	Published - Jul 12 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{9c73393ab4864600b82c5b3551f031f7,

title = "Epitaxial semiconductor films grown by laser photochemical vapor deposition",

abstract = "Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.",

author = "Eden, \{J. G.\} and V. Tavitian and Kiely, \{C. J.\}",

note = "The technical assistance of D. B. Geohegan, M. N. Ediger, M. Ross, K. Voyles and P. Griffis is greatly appreciated. This work was supported by the Air Force Office of Scientific Research (H. Schlossberg) under contract F49620 -85 -C -0141, the Eaton Corporation, and the National Science Foundation under grant DMR 86- 12860.",

year = "1988",

month = jul,

day = "12",

doi = "10.1117/12.944386",

language = "English (US)",

volume = "894",

pages = "26--27",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Epitaxial semiconductor films grown by laser photochemical vapor deposition

AU - Eden, J. G.

AU - Tavitian, V.

AU - Kiely, C. J.

N1 - The technical assistance of D. B. Geohegan, M. N. Ediger, M. Ross, K. Voyles and P. Griffis is greatly appreciated. This work was supported by the Air Force Office of Scientific Research (H. Schlossberg) under contract F49620 -85 -C -0141, the Eaton Corporation, and the National Science Foundation under grant DMR 86- 12860.

PY - 1988/7/12

Y1 - 1988/7/12

N2 - Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.

AB - Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.

UR - https://www.scopus.com/pages/publications/84953823486

UR - https://www.scopus.com/pages/publications/84953823486#tab=citedBy

U2 - 10.1117/12.944386

DO - 10.1117/12.944386

M3 - Article

AN - SCOPUS:84953823486

SN - 0277-786X

VL - 894

SP - 26

EP - 27

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Epitaxial semiconductor films grown by laser photochemical vapor deposition

Abstract

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