Abstract
Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 26-27 |
| Number of pages | 2 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 894 |
| DOIs | |
| State | Published - Jul 12 1988 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering