Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

Seth A. Fortuna; Ryan Dowdy; Xiuling Li

doi:10.1109/ICIPRM.2010.5516728

Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

Seth A. Fortuna, Ryan Dowdy, Xiuling Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.

Original language	English (US)
Title of host publication	2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages	88-91
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2010.5516728
State	Published - Aug 30 2010
Event	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan Duration: May 31 2010 → Jun 4 2010

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Other

Other	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/Territory	Japan
City	Kagawa
Period	5/31/10 → 6/4/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/ICIPRM.2010.5516728

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Fortuna, S. A., Dowdy, R., & Li, X. (2010). Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (pp. 88-91). [5516728] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516728

Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. / Fortuna, Seth A.; Dowdy, Ryan; Li, Xiuling.
2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 88-91 5516728 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fortuna, SA, Dowdy, R & Li, X 2010, Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. in 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516728, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 88-91, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 5/31/10. https://doi.org/10.1109/ICIPRM.2010.5516728

Fortuna SA, Dowdy R, Li X. Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 88-91. 5516728. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2010.5516728

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Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

Abstract

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