TY - GEN
T1 - Epitaxial III-V planar nanowires
T2 - 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
AU - Fortuna, Seth A.
AU - Dowdy, Ryan
AU - Li, Xiuling
PY - 2010
Y1 - 2010
N2 - We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.
AB - We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.
UR - http://www.scopus.com/inward/record.url?scp=77955938201&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955938201&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2010.5516728
DO - 10.1109/ICIPRM.2010.5516728
M3 - Conference contribution
AN - SCOPUS:77955938201
SN - 9781424459209
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 88
EP - 91
BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Y2 - 31 May 2010 through 4 June 2010
ER -