Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

Seth A. Fortuna, Ryan Dowdy, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.

Original languageEnglish (US)
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages88-91
Number of pages4
DOIs
StatePublished - Aug 30 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: May 31 2010Jun 4 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
CountryJapan
CityKagawa
Period5/31/106/4/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Fortuna, S. A., Dowdy, R., & Li, X. (2010). Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (pp. 88-91). [5516728] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516728