Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable

Seth A. Fortuna, Ryan Dowdy, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.

Original languageEnglish (US)
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages88-91
Number of pages4
DOIs
StatePublished - Aug 30 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: May 31 2010Jun 4 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
CountryJapan
CityKagawa
Period5/31/106/4/10

Fingerprint

Nanowires
Semiconductor materials
Substrates
Processing
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Fortuna, S. A., Dowdy, R., & Li, X. (2010). Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (pp. 88-91). [5516728] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516728

Epitaxial III-V planar nanowires : Self-aligned, high-mobility and transfer-printable. / Fortuna, Seth A.; Dowdy, Ryan; Li, Xiuling.

2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 88-91 5516728 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fortuna, SA, Dowdy, R & Li, X 2010, Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. in 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516728, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 88-91, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 5/31/10. https://doi.org/10.1109/ICIPRM.2010.5516728
Fortuna SA, Dowdy R, Li X. Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 88-91. 5516728. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516728
Fortuna, Seth A. ; Dowdy, Ryan ; Li, Xiuling. / Epitaxial III-V planar nanowires : Self-aligned, high-mobility and transfer-printable. 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. pp. 88-91 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
@inproceedings{401a58f815c749ef9fa47f7003ec50ff,
title = "Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable",
abstract = "We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.",
author = "Fortuna, {Seth A.} and Ryan Dowdy and Xiuling Li",
year = "2010",
month = "8",
day = "30",
doi = "10.1109/ICIPRM.2010.5516728",
language = "English (US)",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "88--91",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",

}

TY - GEN

T1 - Epitaxial III-V planar nanowires

T2 - Self-aligned, high-mobility and transfer-printable

AU - Fortuna, Seth A.

AU - Dowdy, Ryan

AU - Li, Xiuling

PY - 2010/8/30

Y1 - 2010/8/30

N2 - We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.

AB - We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transferprintable and compatible with existing processing technology and integratable with various devices.

UR - http://www.scopus.com/inward/record.url?scp=77955938201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955938201&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2010.5516728

DO - 10.1109/ICIPRM.2010.5516728

M3 - Conference contribution

AN - SCOPUS:77955938201

SN - 9781424459209

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 88

EP - 91

BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings

ER -