Epitaxial growth of VO2 by periodic annealing

J. W. Tashman, J. H. Lee, H. Paik, J. A. Moyer, R. Misra, J. A. Mundy, T. Spila, T. A. Merz, J. Schubert, D. A. Muller, P. Schiffer, D. G. Schlom

Research output: Contribution to journalArticlepeer-review

Abstract

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6nm.

Original languageEnglish (US)
Article number063104
JournalApplied Physics Letters
Volume104
Issue number6
DOIs
StatePublished - Oct 2 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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