Epitaxial growth of three-dimensionally architectured optoelectronic devices

Erik C. Nelson, Neville L. Dias, Kevin P. Bassett, Simon N. Dunham, Varun Verma, Masao Miyake, Pierre Wiltzius, John A. Rogers, James J. Coleman, Xiuling Li, Paul V. Braun

Research output: Contribution to journalArticle

Abstract

Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group III-V materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.

Original languageEnglish (US)
Pages (from-to)676-681
Number of pages6
JournalNature Materials
Volume10
Issue number9
DOIs
StatePublished - Sep 2011

Fingerprint

optoelectronic devices
Photonic crystals
Epitaxial growth
Optoelectronic devices
epitaxy
Light emitting diodes
photonics
Electric losses
crystals
Semiconductor diodes
Optical losses
light emitting diodes
Metamaterials
Refraction
Solar cells
preserving
refraction
Crystals
templates
Lasers

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nelson, E. C., Dias, N. L., Bassett, K. P., Dunham, S. N., Verma, V., Miyake, M., ... Braun, P. V. (2011). Epitaxial growth of three-dimensionally architectured optoelectronic devices. Nature Materials, 10(9), 676-681. https://doi.org/10.1038/nmat3071

Epitaxial growth of three-dimensionally architectured optoelectronic devices. / Nelson, Erik C.; Dias, Neville L.; Bassett, Kevin P.; Dunham, Simon N.; Verma, Varun; Miyake, Masao; Wiltzius, Pierre; Rogers, John A.; Coleman, James J.; Li, Xiuling; Braun, Paul V.

In: Nature Materials, Vol. 10, No. 9, 09.2011, p. 676-681.

Research output: Contribution to journalArticle

Nelson, EC, Dias, NL, Bassett, KP, Dunham, SN, Verma, V, Miyake, M, Wiltzius, P, Rogers, JA, Coleman, JJ, Li, X & Braun, PV 2011, 'Epitaxial growth of three-dimensionally architectured optoelectronic devices', Nature Materials, vol. 10, no. 9, pp. 676-681. https://doi.org/10.1038/nmat3071
Nelson EC, Dias NL, Bassett KP, Dunham SN, Verma V, Miyake M et al. Epitaxial growth of three-dimensionally architectured optoelectronic devices. Nature Materials. 2011 Sep;10(9):676-681. https://doi.org/10.1038/nmat3071
Nelson, Erik C. ; Dias, Neville L. ; Bassett, Kevin P. ; Dunham, Simon N. ; Verma, Varun ; Miyake, Masao ; Wiltzius, Pierre ; Rogers, John A. ; Coleman, James J. ; Li, Xiuling ; Braun, Paul V. / Epitaxial growth of three-dimensionally architectured optoelectronic devices. In: Nature Materials. 2011 ; Vol. 10, No. 9. pp. 676-681.
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