Epitaxial growth of single crystal uranium oxide thin films on TiO 2, Al2O3, YSZ, ZnO and NdGaO3 substrates

Epitaxial growth of single crystal uranium oxide thin films on TiO ₂, Al₂O₃, YSZ, ZnO and NdGaO₃ substrates

Mohamed S. Elbakhshwan, Brent J. Heuser

Research output: Contribution to journal › Conference article › peer-review

Original language	English (US)
Pages (from-to)	404-406
Number of pages	3
Journal	Transactions of the American Nuclear Society
Volume	108
State	Published - 2013
Event	2013 ANS Annual Meeting - Next Generation Nuclear Energy: Prospects and Challenges - Atlanta, GA, United States Duration: Jun 16 2013 → Jun 20 2013

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title = "Epitaxial growth of single crystal uranium oxide thin films on TiO 2, Al2O3, YSZ, ZnO and NdGaO3 substrates",

author = "Elbakhshwan, {Mohamed S.} and Heuser, {Brent J.}",

year = "2013",

language = "English (US)",

volume = "108",

pages = "404--406",

journal = "Transactions of the American Nuclear Society",

issn = "0003-018X",

note = "2013 ANS Annual Meeting - Next Generation Nuclear Energy: Prospects and Challenges ; Conference date: 16-06-2013 Through 20-06-2013",

}

TY - JOUR

T1 - Epitaxial growth of single crystal uranium oxide thin films on TiO 2, Al2O3, YSZ, ZnO and NdGaO3 substrates

AU - Elbakhshwan, Mohamed S.

AU - Heuser, Brent J.

PY - 2013

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M3 - Conference article

AN - SCOPUS:84902479164

SN - 0003-018X

VL - 108

SP - 404

EP - 406

JO - Transactions of the American Nuclear Society

JF - Transactions of the American Nuclear Society

T2 - 2013 ANS Annual Meeting - Next Generation Nuclear Energy: Prospects and Challenges

Y2 - 16 June 2013 through 20 June 2013

ER -