Epitaxial Ge_xSi_1-x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates

Keyphrases

• Si(111) 100%
• SiGe 100%
• Epitaxial 100%
• Pulsed Laser 100%
• Si (100) Substrate 100%
• Alloy Layer 100%
• Ns Pulse 50%
• Electron Beam 50%
• Crystallinity 50%
• Molecular Beam Epitaxy 50%
• Energy Density 50%
• Heteroepitaxial Structures 50%
• Ion Channels 50%
• Laser-induced 50%
• Contamination Indices 50%
• Pulse Width 50%
• Regrowth 50%
• MeV Ions 50%
• Laser Processing 50%
• Layer Growth 50%
• Square Area 50%
• Cross-sectional Transmission Electron Microscopy 50%
• Ge Film 50%
• XeCl Laser 50%
• Germanium Film 50%
• Ge Fraction 50%

Engineering

• Pulsed Laser 100%
• Alloy Layer 100%
• Energy Density 50%
• Transmissions 50%
• Crystallinity 50%
• Pulse Duration 50%
• Laser Processing 50%
• Channelling 50%
• Si Interface 50%
• Torr 50%
• Excimer Laser 50%
• Square Area 50%

Material Science

• Film 100%
• Germanium 50%
• Energy Density 50%
• Molecular Beam Epitaxy 50%
• Transmission Electron Microscopy 50%