Epitaxial bonding and transfer processes for large-scale heterogeneously integrated electronic-photonic circuitry

Keyphrases

• Back-end-of-line 25%
• Bonding Process 100%
• Carrier Wafer 25%
• Circuitry 100%
• CMOS Technology 50%
• Commercially Available 25%
• Distinct Patterns 25%
• Electrical Interconnect 25%
• Electronic Devices 25%
• Electronic System 25%
• Epitaxial 100%
• Epitaxial Structure 50%
• Eutectic Bonding 25%
• Gallium Arsenide 25%
• Heterogeneous Integration 25%
• III-V 50%
• III-V Materials 25%
• Integrated Circuits 25%
• Integrated Electronics 100%
• Light-emitting Transistors 25%
• Mechanical Bond 25%
• Metallization Process 25%
• New Functionalities 25%
• Ohmic Contact 25%
• Photonic Devices 50%
• Photonic Integrated Circuits 25%
• Photonic Systems 25%
• Photonics 100%
• Process Flow 25%
• Scalable Processing 25%
• Silicon Carrier 25%
• Single Wafer 25%
• Thermal Path 25%
• Thermal-mechanical 25%
• Transfer Process 100%
• Transistor 25%
• Wafer 75%
• Wafer-scale 25%

Engineering

• Back Side 33%
• Bonding Process 33%
• Electrical Interconnects 33%
• Emitting Light 33%
• Eutectic Bonding 33%
• Gallium Arsenide 33%
• Integrated Circuit 33%
• Interconnects 33%
• Metallizations 33%
• Ohmic Contacts 33%
• Photonic Devices 66%
• Photonics 100%
• Process Flow 33%
• Transfer Process 100%

Material Science

• Electronic Circuit 25%
• Gallium Arsenide 25%
• Optical Device 50%
• Silicon 100%
• Transfer Process 100%
• Transistor 50%