Epitaxial bonding and transfer for heterogeneous integration of electronic-photonic circuitry

Keyphrases

• Photonics 100%
• Wafer 100%
• III-V 100%
• Epitaxial 100%
• Heterogeneous Integration 100%
• Electronic Integration 100%
• Circuitry 100%
• CMOS Technology 100%
• Photonic Devices 100%
• Epitaxial Transfer 100%
• Epitaxial Layers 50%
• Commercially Available 50%
• Heterogeneous Materials 50%
• Bonding Process 50%
• GaAs Wafer 50%
• Epitaxial Structure 50%
• Material Layout 50%
• Unison 50%
• Device Networks 50%
• Logical Systems 50%
• Fine Alignment 50%
• III-V Photonics 50%
• Silicon Carrier 50%
• Eutectic Bonding 50%
• Scalable Formation 50%
• Carrier Wafer 50%
• Photonic Logic 50%
• Temporary Bonding 50%

Engineering

• Photonics 100%
• Photonic Devices 100%
• Gallium Arsenide 50%
• Epitaxial Layer 50%
• Bonding Process 50%
• Eutectic Bonding 50%
• Logic System 50%

Material Science

• Optical Device 100%
• Silicon 100%
• Epitaxial Layer 50%
• Gallium Arsenide 50%
• Heterogeneous Material 50%