Epitaxial bonding and transfer for heterogeneous integration of electronic-photonic circuitry

John A. Carlson, Patrick Su, John M. Dallesasse

Research output: Contribution to conferencePaperpeer-review

Abstract

A process that enables the formation of III-V photonic devices on CMOS-compatible silicon for the integration of a photonic logic system is demonstrated. III-V epitaxial structures are assembled on a silicon carrier wafer using commercially available temporary-bonding polymers, allowing for the distribution of distinct materials suitable for fabricating a photonic device network. These epitaxial layers are etched into precisely located geometric islands that can align with features in a CMOS-compatible host wafer. Epitaxial transfer then unites this array of islands onto the host wafer permanently by a metal-assisted eutectic bonding process. This process is shown with GaAs wafers to demonstrate the scalable formation of heterogeneous material layouts using a single epitaxial transfer such that fine alignment of devices can be constructed from the transferred III-V islands in unison.

Original languageEnglish (US)
StatePublished - 2018
Event2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States
Duration: May 7 2018May 10 2018

Other

Other2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
CountryUnited States
CityAustin
Period5/7/185/10/18

Keywords

  • Epitaxial Transfer
  • Heterogeneous Integration
  • Photonic Logic

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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