EOS/ESD reliability of partially depleted SOI technology

P. Raha; C. Diaz; E. Rosenbaum; M. Cao; P. Vandevoorde; W. Greene

doi:10.1109/16.740912

EOS/ESD reliability of partially depleted SOI technology

P. Raha, C. Diaz, E. Rosenbaum, M. Cao, P. Vandevoorde, W. Greene

Research output: Contribution to journal › Article › peer-review

Abstract

A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

Original language	English (US)
Pages (from-to)	429-431
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	2
DOIs	https://doi.org/10.1109/16.740912
State	Published - 1999

Keywords

ESD
Modeling
SOI

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/16.740912

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@article{8e843de97cd14c44ba50eb0f046238a9,

title = "EOS/ESD reliability of partially depleted SOI technology",

abstract = "A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.",

keywords = "ESD, Modeling, SOI",

author = "P. Raha and C. Diaz and E. Rosenbaum and M. Cao and P. Vandevoorde and W. Greene",

year = "1999",

doi = "10.1109/16.740912",

language = "English (US)",

volume = "46",

pages = "429--431",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - EOS/ESD reliability of partially depleted SOI technology

AU - Raha, P.

AU - Diaz, C.

AU - Rosenbaum, E.

AU - Cao, M.

AU - Vandevoorde, P.

AU - Greene, W.

PY - 1999

Y1 - 1999

N2 - A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

AB - A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

KW - ESD

KW - Modeling

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=0033079805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033079805&partnerID=8YFLogxK

U2 - 10.1109/16.740912

DO - 10.1109/16.740912

M3 - Article

AN - SCOPUS:0033079805

SN - 0018-9383

VL - 46

SP - 429

EP - 431

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

EOS/ESD reliability of partially depleted SOI technology

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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