EOS/ESD reliability of partially depleted SOI technology

P. Raha, C. Diaz, E. Rosenbaum, M. Cao, P. Vandevoorde, W. Greene

Research output: Contribution to journalArticle

Abstract

A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

Original languageEnglish (US)
Pages (from-to)429-431
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume46
Issue number2
DOIs
StatePublished - Dec 1 1999

Keywords

  • ESD
  • Modeling
  • SOI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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