EOS/ESD reliability of partially depleted SOI technology

P. Raha, C. Diaz, Elyse Rosenbaum, M. Cao, P. Vandevoorde, W. Greene

Research output: Contribution to journalArticle

Abstract

A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

Original languageEnglish (US)
Pages (from-to)429-431
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume46
Issue number2
DOIs
StatePublished - Dec 1 1999

Fingerprint

Electrostatic discharge
Diodes
Simulators
Networks (circuits)

Keywords

  • ESD
  • Modeling
  • SOI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

EOS/ESD reliability of partially depleted SOI technology. / Raha, P.; Diaz, C.; Rosenbaum, Elyse; Cao, M.; Vandevoorde, P.; Greene, W.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 2, 01.12.1999, p. 429-431.

Research output: Contribution to journalArticle

Raha, P, Diaz, C, Rosenbaum, E, Cao, M, Vandevoorde, P & Greene, W 1999, 'EOS/ESD reliability of partially depleted SOI technology', IEEE Transactions on Electron Devices, vol. 46, no. 2, pp. 429-431. https://doi.org/10.1109/16.740912
Raha, P. ; Diaz, C. ; Rosenbaum, Elyse ; Cao, M. ; Vandevoorde, P. ; Greene, W. / EOS/ESD reliability of partially depleted SOI technology. In: IEEE Transactions on Electron Devices. 1999 ; Vol. 46, No. 2. pp. 429-431.
@article{8e843de97cd14c44ba50eb0f046238a9,
title = "EOS/ESD reliability of partially depleted SOI technology",
abstract = "A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.",
keywords = "ESD, Modeling, SOI",
author = "P. Raha and C. Diaz and Elyse Rosenbaum and M. Cao and P. Vandevoorde and W. Greene",
year = "1999",
month = "12",
day = "1",
doi = "10.1109/16.740912",
language = "English (US)",
volume = "46",
pages = "429--431",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - EOS/ESD reliability of partially depleted SOI technology

AU - Raha, P.

AU - Diaz, C.

AU - Rosenbaum, Elyse

AU - Cao, M.

AU - Vandevoorde, P.

AU - Greene, W.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

AB - A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFET's and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multiflnger SOI ESD protection MOSFET's has been derived from the model. We present experimental data to support this design rule.

KW - ESD

KW - Modeling

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=0033079805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033079805&partnerID=8YFLogxK

U2 - 10.1109/16.740912

DO - 10.1109/16.740912

M3 - Article

AN - SCOPUS:0033079805

VL - 46

SP - 429

EP - 431

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -