Environmental degradation of AlxGa1-xAs-GaAs quantum-well heterostructures

J. M. Dallesasse, N. El-Zein, N. Holonyak, K. C. Hsieh, R. D. Burnham, R. D. Dupuis

Research output: Contribution to journalArticlepeer-review

Abstract

Data describing the deterioration of AlxGa1 -xAs-GaAs heterostructures in long-term exposure (2-12 years) to normal room environmental conditions (∼20-25 °C, varying humidity) are presented. Optical microscopy, scanning electron microscopy, transmission electron microscopy, and electron dispersion x-ray spectroscopy are used to examine AlxGa1-xAs-GaAs quantum-well heterostructure material that has hydrolyzed at cleaved edges, cracks, and fissures, and at pinholes in cap layers. The hydrolysis is found to be significant for thicker (>0.1 μm) AlxGa1 -xAs layers of higher composition (x>0.85).

Original languageEnglish (US)
Pages (from-to)2235-2238
Number of pages4
JournalJournal of Applied Physics
Volume68
Issue number5
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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