Enhancement of optical gain of semiconductors embedded in three-dimensional photonic crystals

Yurii A Vlasov, K. Luterova, I. Pelant, B. Hönerlage, V. N. Astratov

Research output: Contribution to journalArticlepeer-review

Abstract

The three-dimensional photonic crystals used in this study were synthetic opals, composed of submicron silica spheres, close-packed in a face-centered cubic structure with a period of 200 nm, that exhibit photonic stopbands around 600 nm. We present measurements of the optical gain of CdS quantum dots (QDs) embedded inside the interstitials between the silica spheres. Unlike the usual gain spectra of CdS QDs in glass matrices, which display maximum gain at energies of the first quantum-confined transitions, for QDs embedded in photonic crystals the gain maximum is shifted toward the high-frequency edge of the photonic stopband (2.2 eV) far below the absorption edge of the semiconductor (2.5 eV). Studies of temperature, intensity, and orientation dependencies of the gain spectra allow one to ascribe the observed effect to gain enhancement caused by multiple coherent Bragg scattering of light in the periodic photonic crystal.

Original languageEnglish (US)
Pages (from-to)1616-1618
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number12
DOIs
StatePublished - Sep 22 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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