Enhancement-mode in0.52Al0.48As/In 0.53Ga0.47As/InP HEMT utilising Ir/Ti/Pt/Au gate

S. Kim; J. H. Jang; I. Adesida

doi:10.1049/el:20051504

Enhancement-mode in_0.52Al_0.48As/In _0.53Ga_0.47As/InP HEMT utilising Ir/Ti/Pt/Au gate

S. Kim
, J. H. Jang
, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of g_m before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.

Original language	English (US)
Pages (from-to)	871-872
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	15
DOIs	https://doi.org/10.1049/el:20051504
State	Published - Jul 21 2005
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:20051504

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Cite this

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abstract = "InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.",

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N2 - InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.

AB - InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.

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