InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.
ASJC Scopus subject areas
- Electrical and Electronic Engineering