Abstract
We have established an enhancement/depletion (E/D) InP high electron mobility transistor (HEMT) process. The fabrication and characterization of circuits employing a direct-coupled FET logic (DCFL) technology are demonstrated using this process. A 23-stage ring oscillator was fabricated and tested. A room temperature propagation delay time (τpd) of 16.72 ps/stage as well as a subfemtojoule power-delay product (PDP) of only 0.322 fJ/stage were obtained for the oscillator which, to the best of the authors' knowledge, is the lowest reported PDP in the InP material system. Also a divide-by-four prescaler was also fabricated and characterized; this demonstrated functionality up to 6 GHz, with a power dissipation of only 5.37 mW/stage. This marks the first time that a prescaler has been fabricated in the InP material system using DCFL technology.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 493-496 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1998 |
| Event | Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn Duration: May 11 1998 → May 15 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering