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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric Heller, Antonio Crespo, Robert Fitch, Jonathan P. McCandless, Kevin Leedy, Michele Baldini, Gunter Wagner, Zbigniew Galazka, Xiuling Li, Gregg Jessen
Research output: Contribution to journal › Article › peer-review