Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak; Neil Moser; Andrew J. Green; Dennis E. Walker; Stephen E. Tetlak; Eric Heller; Antonio Crespo; Robert Fitch; Jonathan P. McCandless; Kevin Leedy; Michele Baldini; Gunter Wagner; Zbigniew Galazka; Xiuling Li; Gregg Jessen

doi:10.1063/1.4967931

Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric Heller, Antonio Crespo, Robert Fitch, Jonathan P. McCandless, Kevin Leedy, Michele Baldini, Gunter Wagner, Zbigniew Galazka, Xiuling Li, Gregg Jessen

Research output: Contribution to journal › Article › peer-review

Abstract

Sn-doped gallium oxide (Ga₂O₃) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl₃ plasma etching on a native semi-insulating Mg-doped (100) β-Ga₂O₃ substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al₂O₃ gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The I_ON/I_OFF ratio is greater than 10⁵ and is mainly limited by high on-resistance that can be significantly improved. At V_G = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

Original language	English (US)
Article number	213501
Journal	Applied Physics Letters
Volume	109
Issue number	21
DOIs	https://doi.org/10.1063/1.4967931
State	Published - Nov 21 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4967931

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Chabak, K. D., Moser, N., Green, A. J., Walker, D. E., Tetlak, S. E., Heller, E., Crespo, A., Fitch, R., McCandless, J. P., Leedy, K., Baldini, M., Wagner, G., Galazka, Z., Li, X., & Jessen, G. (2016). Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage. Applied Physics Letters, 109(21), [213501]. https://doi.org/10.1063/1.4967931

Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage. / Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, Gregg.

In: Applied Physics Letters, Vol. 109, No. 21, 213501, 21.11.2016.

Research output: Contribution to journal › Article › peer-review

Chabak, KD, Moser, N, Green, AJ, Walker, DE, Tetlak, SE, Heller, E, Crespo, A, Fitch, R, McCandless, JP, Leedy, K, Baldini, M, Wagner, G, Galazka, Z, Li, X & Jessen, G 2016, 'Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage', Applied Physics Letters, vol. 109, no. 21, 213501. https://doi.org/10.1063/1.4967931

Chabak, Kelson D. ; Moser, Neil ; Green, Andrew J. ; Walker, Dennis E. ; Tetlak, Stephen E. ; Heller, Eric ; Crespo, Antonio ; Fitch, Robert ; McCandless, Jonathan P. ; Leedy, Kevin ; Baldini, Michele ; Wagner, Gunter ; Galazka, Zbigniew ; Li, Xiuling ; Jessen, Gregg. / Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage. In: Applied Physics Letters. 2016 ; Vol. 109, No. 21.

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title = "Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage",

abstract = "Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.",

author = "Chabak, {Kelson D.} and Neil Moser and Green, {Andrew J.} and Walker, {Dennis E.} and Tetlak, {Stephen E.} and Eric Heller and Antonio Crespo and Robert Fitch and McCandless, {Jonathan P.} and Kevin Leedy and Michele Baldini and Gunter Wagner and Zbigniew Galazka and Xiuling Li and Gregg Jessen",

note = "Funding Information: The authors would like to acknowledge the support of bulk and epitaxial crystal growth by IKZ-Berlin and fabrication support by Mr. Jason Hickey and Mr. Andrew Browning at AFRL. X. Li acknowledges NSF DMR #1508140. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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AU - Chabak, Kelson D.

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AU - Green, Andrew J.

AU - Walker, Dennis E.

AU - Tetlak, Stephen E.

AU - Heller, Eric

AU - Crespo, Antonio

AU - Fitch, Robert

AU - McCandless, Jonathan P.

AU - Leedy, Kevin

AU - Baldini, Michele

AU - Wagner, Gunter

AU - Galazka, Zbigniew

AU - Li, Xiuling

AU - Jessen, Gregg

N1 - Funding Information: The authors would like to acknowledge the support of bulk and epitaxial crystal growth by IKZ-Berlin and fabrication support by Mr. Jason Hickey and Mr. Andrew Browning at AFRL. X. Li acknowledges NSF DMR #1508140. Publisher Copyright: © 2016 Author(s).

PY - 2016/11/21

Y1 - 2016/11/21

N2 - Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

AB - Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

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Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage

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