Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric Heller, Antonio Crespo, Robert Fitch, Jonathan P. McCandless, Kevin Leedy, Michele Baldini, Gunter Wagner, Zbigniew Galazka, Xiuling Li, Gregg Jessen

Research output: Contribution to journal › Article

Abstract

Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

Original languageEnglish (US)
Article number213501
JournalApplied Physics Letters
Volume109
Issue number21
DOIs
StatePublished - Nov 21 2016

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wrap
fins
electrical faults
field effect transistors
augmentation
gallium oxides
plasma etching
threshold voltage
high voltages
spacing
cross sections

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chabak, K. D., Moser, N., Green, A. J., Walker, D. E., Tetlak, S. E., Heller, E., ... Jessen, G. (2016). Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. Applied Physics Letters, 109(21), [213501]. https://doi.org/10.1063/1.4967931

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. / Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, Gregg.

In: Applied Physics Letters, Vol. 109, No. 21, 213501, 21.11.2016.

Research output: Contribution to journal › Article

Chabak, KD, Moser, N, Green, AJ, Walker, DE, Tetlak, SE, Heller, E, Crespo, A, Fitch, R, McCandless, JP, Leedy, K, Baldini, M, Wagner, G, Galazka, Z, Li, X & Jessen, G 2016, 'Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage', Applied Physics Letters, vol. 109, no. 21, 213501. https://doi.org/10.1063/1.4967931
Chabak KD, Moser N, Green AJ, Walker DE, Tetlak SE, Heller E et al. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. Applied Physics Letters. 2016 Nov 21;109(21). 213501. https://doi.org/10.1063/1.4967931
Chabak, Kelson D. ; Moser, Neil ; Green, Andrew J. ; Walker, Dennis E. ; Tetlak, Stephen E. ; Heller, Eric ; Crespo, Antonio ; Fitch, Robert ; McCandless, Jonathan P. ; Leedy, Kevin ; Baldini, Michele ; Wagner, Gunter ; Galazka, Zbigniew ; Li, Xiuling ; Jessen, Gregg. / Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. In: Applied Physics Letters. 2016 ; Vol. 109, No. 21.
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AU - Green, Andrew J.

AU - Walker, Dennis E.

AU - Tetlak, Stephen E.

AU - Heller, Eric

AU - Crespo, Antonio

AU - Fitch, Robert

AU - McCandless, Jonathan P.

AU - Leedy, Kevin

AU - Baldini, Michele

AU - Wagner, Gunter

AU - Galazka, Zbigniew

AU - Li, Xiuling

AU - Jessen, Gregg

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N2 - Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

AB - Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

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