Enhanced spacer-is-dielectric (SID) decomposition flow with model-based verification

Yuelin Du, Hua Song, James Shiely, Martin D.F. Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-aligned double patterning (SADP) lithography is a leading candidate for 14nm node lower-metal layer fabrication. Besides the intrinsic overlay-tolerance capability, the accurate spacer width and uniformity control enables such technology to fabricate very narrow and dense patterns. Spacer-is-dielectric (SID) is the most popular flavor of SADP with higher flexibility in design. In the SID process, due to uniform spacer deposition, the spacer shape gets rounded at convex mandrel corners, and disregarding the corner rounding issue during SID decomposition may result in severe residue artifacts on device patterns. Previously, SADP decomposition was merely verified by Boolean operations on the decomposed layers, where the residue artifacts are not even identifiable. This paper proposes a model-based verification method for SID decomposition to identify the artifacts caused by spacer corner rounding. Then targeting residue artifact removal, an enhanced SID decomposition flow is introduced. Simulation results show that residue artifacts are removed effectively through the enhanced SID decomposition strategy.

Original languageEnglish (US)
Title of host publicationDesign for Manufacturability through Design-Process Integration VII
DOIs
StatePublished - Jun 10 2013
EventSPIE Conference on Designfor Manufacturability through Design-Process Integration, DfM-DPI 2013 - San Jose, CA, United States
Duration: Feb 27 2013Feb 28 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8684
ISSN (Print)0277-786X

Other

OtherSPIE Conference on Designfor Manufacturability through Design-Process Integration, DfM-DPI 2013
CountryUnited States
CitySan Jose, CA
Period2/27/132/28/13

Keywords

  • Model-Based verification
  • Residue artifact removal
  • SID decomposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Du, Y., Song, H., Shiely, J., & Wong, M. D. F. (2013). Enhanced spacer-is-dielectric (SID) decomposition flow with model-based verification. In Design for Manufacturability through Design-Process Integration VII [86840D] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8684). https://doi.org/10.1117/12.2011029