Enhanced room temperature infrared LEDs using monolithically integrated plasmonic materials

Andrew F. Briggs, Leland Nordin, Aaron J. Muhowski, Evan Simmons, Pankul Dhingra, Minjoo L. Lee, Viktor A. Podolskiy, Daniel Wasserman, Seth R. Bank

Research output: Contribution to journalArticlepeer-review


Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near the metal plasma frequency, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode, leading to a 5.6× enhancement over an otherwise identical non-plasmonic control sample. The device presented exhibits optical powers comparable, and temperature performance far superior, to commercially available devices.

Original languageEnglish (US)
Pages (from-to)1355-1358
Number of pages4
Issue number10
StatePublished - Oct 20 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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