Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching

Munho Kim, Soongyu Yi, Jeong Dong Kim, Xin Yin, Jun Li, Jihye Bong, Dong Liu, Shih Chia Liu, Alexander Kvit, Weidong Zhou, Xudong Wang, Zongfu Yu, Zhenqiang Ma, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Surface antireflection micro and nanostructures, normally formed by conventional reactive ion etching, offer advantages in photovoltaic and optoelectronic applications, including wider spectral wavelength ranges and acceptance angles. One challenge in incorporating these structures into devices is that optimal optical properties do not always translate into electrical performance due to surface damage, which significantly increases surface recombination. Here, we present a simple approach for fabricating antireflection structures, with self-passivated amorphous Ge (α-Ge) surfaces, on single crystalline Ge (c-Ge) surface using the inverse metal-assisted chemical etching technology (I-MacEtch). Vertical Schottky Ge photodiodes fabricated with surface structures involving arrays of pyramids or periodic nano-indentations show clear improvements not only in responsivity, due to enhanced optical absorption, but also in dark current. The dark current reduction is attributed to the Schottky barrier height increase and self-passivation effect of the i-MacEtch induced α-Ge layer formed on top of the c-Ge surface. The results demonstrated in this work show that MacEtch can be a viable technology for advanced light trapping and surface engineering in Ge and other semiconductor based optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)6748-6755
Number of pages8
JournalACS Nano
Volume12
Issue number7
DOIs
StatePublished - Jul 24 2018

Fingerprint

Texturing
Photodiodes
Passivation
passivity
photodiodes
Etching
Metals
etching
metals
Dark currents
Optoelectronic devices
dark current
Crystalline materials
Reactive ion etching
Nanoindentation
Surface structure
Light absorption
optoelectronic devices
nanoindentation
pyramids

Keywords

  • antireflection coating
  • germanium
  • light trapping
  • metal-assisted chemical etching
  • photodiodes
  • surface texture

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching. / Kim, Munho; Yi, Soongyu; Kim, Jeong Dong; Yin, Xin; Li, Jun; Bong, Jihye; Liu, Dong; Liu, Shih Chia; Kvit, Alexander; Zhou, Weidong; Wang, Xudong; Yu, Zongfu; Ma, Zhenqiang; Li, Xiuling.

In: ACS Nano, Vol. 12, No. 7, 24.07.2018, p. 6748-6755.

Research output: Contribution to journalArticle

Kim, M, Yi, S, Kim, JD, Yin, X, Li, J, Bong, J, Liu, D, Liu, SC, Kvit, A, Zhou, W, Wang, X, Yu, Z, Ma, Z & Li, X 2018, 'Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching', ACS Nano, vol. 12, no. 7, pp. 6748-6755. https://doi.org/10.1021/acsnano.8b01848
Kim, Munho ; Yi, Soongyu ; Kim, Jeong Dong ; Yin, Xin ; Li, Jun ; Bong, Jihye ; Liu, Dong ; Liu, Shih Chia ; Kvit, Alexander ; Zhou, Weidong ; Wang, Xudong ; Yu, Zongfu ; Ma, Zhenqiang ; Li, Xiuling. / Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching. In: ACS Nano. 2018 ; Vol. 12, No. 7. pp. 6748-6755.
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