Enhanced Microwave Performance of Ion-Implanted Mesfet With Graded Gaas/AlgaAs Heterojunctions

G. W. Wang; M. Feng; Y. P. Liaw; R. Kaliski; Y. Chang; C. L. Lau; C. Ito

doi:10.1049/el:19890741

Enhanced Microwave Performance of Ion-Implanted Mesfet With Graded Gaas/AlgaAs Heterojunctions

G. W. Wang, M. Feng, Y. P. Liaw, R. Kaliski, Y. Chang, C. L. Lau, C. Ito

Research output: Contribution to journal › Article › peer-review

Abstract

Ion-implanted MESFETs have been fabricated on an inverted GaAs/AlGaAs heterostructure. The aluminium concentration in the AlGaAs is graded from 0% at the substrate to 30% at the heterointerface. A maximum extrinsic transconductance of 410mS/mm is achieved with 0.5 µm gate devices. This heterojunction ion-implanted FET (HIFET) also exhibits enhanced microwave performance, especially at low drain current, when compared to conventional ion-implanted GaAs MESFETs. At 20% of I_dss, the current gain cutoff frequency f_t is 40 GHz, which increases up to a maximum value of 47 GHz as the drain current rises. These characteristics of high f_t and high gain at low current are advantageous for low-noise applications.

Original language	English (US)
Pages (from-to)	1105-1106
Number of pages	2
Journal	Electronics Letters
Volume	25
Issue number	17
DOIs	https://doi.org/10.1049/el:19890741
State	Published - Aug 3 1989
Externally published	Yes

Keywords

FETs
Ion implantation
Microwave devices and components
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19890741

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abstract = "Ion-implanted MESFETs have been fabricated on an inverted GaAs/AlGaAs heterostructure. The aluminium concentration in the AlGaAs is graded from 0% at the substrate to 30% at the heterointerface. A maximum extrinsic transconductance of 410mS/mm is achieved with 0.5 µm gate devices. This heterojunction ion-implanted FET (HIFET) also exhibits enhanced microwave performance, especially at low drain current, when compared to conventional ion-implanted GaAs MESFETs. At 20% of Idss, the current gain cutoff frequency ft is 40 GHz, which increases up to a maximum value of 47 GHz as the drain current rises. These characteristics of high ft and high gain at low current are advantageous for low-noise applications.",

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author = "Wang, {G. W.} and M. Feng and Liaw, {Y. P.} and R. Kaliski and Y. Chang and Lau, {C. L.} and C. Ito",

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AU - Wang, G. W.

AU - Feng, M.

AU - Liaw, Y. P.

AU - Kaliski, R.

AU - Chang, Y.

AU - Lau, C. L.

AU - Ito, C.

PY - 1989/8/3

Y1 - 1989/8/3

N2 - Ion-implanted MESFETs have been fabricated on an inverted GaAs/AlGaAs heterostructure. The aluminium concentration in the AlGaAs is graded from 0% at the substrate to 30% at the heterointerface. A maximum extrinsic transconductance of 410mS/mm is achieved with 0.5 µm gate devices. This heterojunction ion-implanted FET (HIFET) also exhibits enhanced microwave performance, especially at low drain current, when compared to conventional ion-implanted GaAs MESFETs. At 20% of Idss, the current gain cutoff frequency ft is 40 GHz, which increases up to a maximum value of 47 GHz as the drain current rises. These characteristics of high ft and high gain at low current are advantageous for low-noise applications.

AB - Ion-implanted MESFETs have been fabricated on an inverted GaAs/AlGaAs heterostructure. The aluminium concentration in the AlGaAs is graded from 0% at the substrate to 30% at the heterointerface. A maximum extrinsic transconductance of 410mS/mm is achieved with 0.5 µm gate devices. This heterojunction ion-implanted FET (HIFET) also exhibits enhanced microwave performance, especially at low drain current, when compared to conventional ion-implanted GaAs MESFETs. At 20% of Idss, the current gain cutoff frequency ft is 40 GHz, which increases up to a maximum value of 47 GHz as the drain current rises. These characteristics of high ft and high gain at low current are advantageous for low-noise applications.

KW - FETs

KW - Ion implantation

KW - Microwave devices and components

KW - Semiconductor devices and materials

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Enhanced Microwave Performance of Ion-Implanted Mesfet With Graded Gaas/AlgaAs Heterojunctions

Abstract

Keywords

ASJC Scopus subject areas

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