Abstract
In-situ atomic force microscopy (AFM) is shown to locally enhance the electrochemical deposition of copper (Cu) onto single-crystal Cu surfaces. The tip sample interaction increases the growth rate of Cu, resulting in the localized formation of nanometer scale epitaxial deposits. The results are consistent with a heterogeneous nucleation and growth mechanism in which the tip-sample interaction creates surface defect sites in a passivating layer which are active toward the electrochemical adsorption of Cu species. This protection - deprotection scheme enables precise control of feature sizes and allows this technique to be used for fabrication and constructive modification of solid-liquid interfaces.
Original language | English (US) |
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Pages (from-to) | 11246-11250 |
Number of pages | 5 |
Journal | Journal of physical chemistry |
Volume | 98 |
Issue number | 44 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- General Engineering
- Physical and Theoretical Chemistry