Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

C. Adamo, L. Méchin, T. Heeg, M. Katz, S. Mercone, B. Guillet, S. Wu, J. M. Routoure, J. Schubert, W. Zander, R. Misra, P. Schiffer, X. Q. Pan, D. G. Schlom

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

Original languageEnglish (US)
Article number062504
JournalAPL Materials
Volume3
Issue number6
DOIs
StatePublished - Jun 1 2015

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering

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