Enhanced dark current suppression of amorphous selenium detector with use of IGZO hole blocking layer

Shiva Abbaszadeh, Alireza Tari, William S. Wong, Karim S. Karim

Research output: Contribution to journalArticlepeer-review

Abstract

We examined the potential application of indium gallium zinc oxide (IGZO) as a hole-blocking layer for an amorphous selenium (a-Se)-based detector to reduce the dark current and improve the sensitivity of the detector. By employing a thin layer of IGZO (375 nm), the dark current of an a-Se detector remains below 1 pA/mm2 up to electric fields as high as 60 V/μm. The measured dark current at different electric fields is comparable to the thermal generation currents in a-Se, thus demonstrating the good hole-blocking properties of IGZO. The detector's photo response was characterized using a blue light-emitting diode at different electric fields. A factor of three improvement in external quantum efficiency was observed by increasing the electric field of the detector from 10 to 50 V/μm.

Original languageEnglish (US)
Article number6874497
Pages (from-to)3355-3357
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume61
Issue number9
DOIs
StatePublished - Sep 2014

Keywords

  • Amorphous selenium (a-Se)
  • detectors
  • hole-blocking layers
  • indium-gallium-zinc oxide (IGZO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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