We examined the potential application of indium gallium zinc oxide (IGZO) as a hole-blocking layer for an amorphous selenium (a-Se)-based detector to reduce the dark current and improve the sensitivity of the detector. By employing a thin layer of IGZO (375 nm), the dark current of an a-Se detector remains below 1 pA/mm2 up to electric fields as high as 60 V/μm. The measured dark current at different electric fields is comparable to the thermal generation currents in a-Se, thus demonstrating the good hole-blocking properties of IGZO. The detector's photo response was characterized using a blue light-emitting diode at different electric fields. A factor of three improvement in external quantum efficiency was observed by increasing the electric field of the detector from 10 to 50 V/μm.
- Amorphous selenium (a-Se)
- hole-blocking layers
- indium-gallium-zinc oxide (IGZO)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering