Enhanced crystallinity of microcrystalline silicon thin films using deuterium in reactive magnetron sputter deposition at 230 °C

J. E. Gerbi, P. Voyles, J. M. Gibson, J. R. Abelson

Research output: Contribution to journalConference article

Abstract

We analyze the formation kinetics and microstructure of hydrogenerated vs. deuterated microcrystalline (μc-Si:H or D) thin films using real-time spectroscopic ellipsometry, post-deposition thermal hydrogen evolution, and TEM. The films are deposited by reactive magnetron sputtering of a silicon target in Ar (1.65 mT) with added partial pressures of H2 or D2 (0-5.5 mT) on Corning 7059 glass substrates at 230 °C. Amorphous films are deposited when PH2 = 0. When hydrogen is added to the chamber, the reactive magnetron sputtering process generates a flux of fast neutral H which promotes μc-Si growth. The substitution of D for H varies the kinetics of hydrogen reflection from the target and implantation into the growing film. We analyze the amorphous to microcrystalline transition as a function of the isotope (H2 or D2) and pressure used in the deposition process. We find that the films enter the microcrystalline regime at lower D2 pressures that H2 pressures. Furthermore, the 〈ε2〉 data determined by ellipsometry have a different shape for deuterated films, compared to hydrogenerated films at similar growth pressures. This indicates changes in band structure which we interpret as evidence for enhanced crystallinity.

Original languageEnglish (US)
Pages (from-to)429-434
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume507
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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