Engineering tunnel junctions on ballistic semiconductor nanowires

J. Damasco, S. T. Gill, S. Gazibegovic, G. Badawy, E. P.A.M. Bakkers, N. Mason

Research output: Contribution to journalArticle

Abstract

Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.

Original languageEnglish (US)
Article number043503
JournalApplied Physics Letters
Volume115
Issue number4
DOIs
StatePublished - Jul 22 2019

Fingerprint

tunnel junctions
ballistics
nanowires
engineering
energy distribution
distribution functions
quantum dots
fabrication
probes
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Damasco, J., Gill, S. T., Gazibegovic, S., Badawy, G., Bakkers, E. P. A. M., & Mason, N. (2019). Engineering tunnel junctions on ballistic semiconductor nanowires. Applied Physics Letters, 115(4), [043503]. https://doi.org/10.1063/1.5108539

Engineering tunnel junctions on ballistic semiconductor nanowires. / Damasco, J.; Gill, S. T.; Gazibegovic, S.; Badawy, G.; Bakkers, E. P.A.M.; Mason, N.

In: Applied Physics Letters, Vol. 115, No. 4, 043503, 22.07.2019.

Research output: Contribution to journalArticle

Damasco, J, Gill, ST, Gazibegovic, S, Badawy, G, Bakkers, EPAM & Mason, N 2019, 'Engineering tunnel junctions on ballistic semiconductor nanowires', Applied Physics Letters, vol. 115, no. 4, 043503. https://doi.org/10.1063/1.5108539
Damasco J, Gill ST, Gazibegovic S, Badawy G, Bakkers EPAM, Mason N. Engineering tunnel junctions on ballistic semiconductor nanowires. Applied Physics Letters. 2019 Jul 22;115(4). 043503. https://doi.org/10.1063/1.5108539
Damasco, J. ; Gill, S. T. ; Gazibegovic, S. ; Badawy, G. ; Bakkers, E. P.A.M. ; Mason, N. / Engineering tunnel junctions on ballistic semiconductor nanowires. In: Applied Physics Letters. 2019 ; Vol. 115, No. 4.
@article{253bd3b791004b55a00ec75f1c7ccc1d,
title = "Engineering tunnel junctions on ballistic semiconductor nanowires",
abstract = "Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.",
author = "J. Damasco and Gill, {S. T.} and S. Gazibegovic and G. Badawy and Bakkers, {E. P.A.M.} and N. Mason",
year = "2019",
month = "7",
day = "22",
doi = "10.1063/1.5108539",
language = "English (US)",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Engineering tunnel junctions on ballistic semiconductor nanowires

AU - Damasco, J.

AU - Gill, S. T.

AU - Gazibegovic, S.

AU - Badawy, G.

AU - Bakkers, E. P.A.M.

AU - Mason, N.

PY - 2019/7/22

Y1 - 2019/7/22

N2 - Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.

AB - Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.

UR - http://www.scopus.com/inward/record.url?scp=85069921008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069921008&partnerID=8YFLogxK

U2 - 10.1063/1.5108539

DO - 10.1063/1.5108539

M3 - Article

AN - SCOPUS:85069921008

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043503

ER -