Engineering quantum confinement and orbital couplings in laterally coupled vertical quantum dots for spintronic applications

J. Kim, P. Matagne, Jean Pierre Leburton, R. M. Martin, T. Hatano, S. Tarucha

Research output: Contribution to journalArticlepeer-review

Abstract

We use three-dimensional self-consistent Kohn-Sham's equations coupled with Poisson's equation to investigate the electrical behavior of laterally coupled vertical quantum dots (LCVQD) for spin-qubit operation. The shape and the depth of the central gate are changed in different ways to correlate gate geometry with the coupling between the two quantum dots. Upon comparing LCVQD single-gate and the split-gate structures, we found that the two inherently different designs result in different energy barrier profiles leading to dissimilar wavefunction coupling between the two dots. Finally, we show that the doping concentrations in the layered structure could be optimized for practical two-qubit operation.

Original languageEnglish (US)
Article number1652849
Pages (from-to)343-349
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume5
Issue number4
DOIs
StatePublished - Jul 2006

Keywords

  • Gallium compounds
  • Quantum dots
  • Quantum effect semiconductor devices
  • Quantum theory
  • Semiconductor device modeling
  • Semiconductor heterojunctions

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

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