Abstract
The cw and high-speed performance of vertical cavity surface emitting laser diodes (VCSELs) are affected by both electrical and optical issues arising from the geometry and fabrication of these devices. Structures with low resistance semiconductor mirrors and Al-oxide confinement layers address these issues and have produced record performance including 50% power conversion efficiency and modulation bandwidths up to 20 GHz at small bias currents.
| Original language | English (US) |
|---|---|
| Pages | 33-41 |
| Number of pages | 9 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: Dec 8 1996 → Dec 11 1996 |
Other
| Other | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD |
|---|---|
| City | Canberra, Aust |
| Period | 12/8/96 → 12/11/96 |
ASJC Scopus subject areas
- Engineering(all)