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Energy-Accuracy Trade-Offs for Resistive In-Memory Computing Architectures
Saion K. Roy
,
Naresh R. Shanbhag
Electrical and Computer Engineering
Information Trust Institute
Coordinated Science Lab
Research output
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peer-review
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Engineering
Field-Effect Transistor
100%
Resistive
100%
Analog-to-Digital Converter
100%
Magnetoresistive Random-Access Memory
100%
Resistive Random Access Memory
66%
Dot Product
66%
Measured Result
33%
Network Level
33%
Parasitic Resistance
33%
Fundamental Limit
33%
Fixed Points
33%
Thermal Noise
33%
Output Signal
33%
Parameter Variation
33%
Conservation of Energy
33%
High Energy Efficiency
33%
Led Value
33%
Current Mirror
33%
Resnet
33%
Material Science
Field Effect Transistor
100%
Ferroelectric Material
100%
Resistive Random-Access Memory
66%
Electronic Circuit
33%
Density
33%
Device Type
33%
Keyphrases
ResNet-20
11%