Reactive d.c. magnetron sputtering of a silicon target in a plasma of Ar plus H2 produces high-quality a-Si:H films. This paper reports a study of the growth flux using mass spectrometry, plasma probes, and computer simulations to determine the identity, flux, energy distribution, and angular distribution of all incident species. Spectroscopic ellipsometry is used to deduce the bulk density of the films. The average energy delivered to the growing film is found to depend on the angle between the target normal and the substrate. The density of unhydrogenated a-Si films increases from 0.94 to 0.97 as the incident energy increases from 13 to 21 eV per deposited Si. The distributions of sputtered particles, of ions, and of fast H affect the film properties and merit continued study.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry