Emission and absorption of phonons in silicon

Z. Aksamija, H. S. Hahm, Umberto Ravaioli

Research output: Contribution to journalConference article

Abstract

We examine in detail the rates of phonon emission and absorption in silicon at several values for the applied electric field. The effect of the field on the electron distribution is obtained from full-band Monte Carlo simulation for bulk silicon. The electron distributions are used to numerically compute the phonon rates and learn about their behavior at high fields. The concept of electron temperature is used to understand the relationship between field and heat emission, and it is found that longitudinal acoustic (LA) phonon emission increases at high fields. Optical absorption is found to be small, while optical phonon emission stays constant across a wide range of electron temperatures. Strong emission of LA phonons at high field can be used to enable heat-conscious design of future silicon devices.

Original languageEnglish (US)
Pages (from-to)90-93
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number1
DOIs
StatePublished - Jun 30 2008
Event15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
Duration: Jul 23 2007Jul 27 2007

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phonons
silicon
electron distribution
electron energy
heat
acoustics
guy wires
field emission
optical absorption
electric fields
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Emission and absorption of phonons in silicon. / Aksamija, Z.; Hahm, H. S.; Ravaioli, Umberto.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 30.06.2008, p. 90-93.

Research output: Contribution to journalConference article

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