Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO 2 (1 1 0) surface

Kandis Leslie Gilliard-AbdulAziz, Edmund G Seebauer

Research output: Contribution to journalArticle

Abstract

The kinetics and diffusion mechanism of surface-injected oxygen interstitials (O i ) in TiO 2 (1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the O i reaction-diffusion network. Extended defects, whether incipient or pre-existing, may act as a source or sink for O i . The present work uses a quantitative microkinetic model to describe this diffusion and reaction network based upon isotopic gas-solid exchange experiments. Pertinent outputs from the model determined that the activation barrier for surface injection of O i is 2.4 eV, while dissolution of O i from extended defect is 3.3 eV. The interstitial sequestration mechanism through extended defects leads to kinetic coupling effects that other sequestration mechanisms would not typically induce.

Original languageEnglish (US)
Pages (from-to)854-860
Number of pages7
JournalApplied Surface Science
Volume470
DOIs
StatePublished - Mar 15 2019

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interstitials
Oxygen
Atoms
oxygen
atoms
Defects
defects
Kinetics
kinetics
sinks
Dissolution
Gases
Chemical activation
dissolving
activation
injection
output
gases
Experiments

Keywords

  • Defects
  • Diffusion
  • Oxygen
  • Semiconductor surface
  • Sulfur
  • TiO2

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO 2 (1 1 0) surface . / Gilliard-AbdulAziz, Kandis Leslie; Seebauer, Edmund G.

In: Applied Surface Science, Vol. 470, 15.03.2019, p. 854-860.

Research output: Contribution to journalArticle

@article{6d9686c9b0fc44d7a1e4f549fddca419,
title = "Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO 2 (1 1 0) surface",
abstract = "The kinetics and diffusion mechanism of surface-injected oxygen interstitials (O i ) in TiO 2 (1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the O i reaction-diffusion network. Extended defects, whether incipient or pre-existing, may act as a source or sink for O i . The present work uses a quantitative microkinetic model to describe this diffusion and reaction network based upon isotopic gas-solid exchange experiments. Pertinent outputs from the model determined that the activation barrier for surface injection of O i is 2.4 eV, while dissolution of O i from extended defect is 3.3 eV. The interstitial sequestration mechanism through extended defects leads to kinetic coupling effects that other sequestration mechanisms would not typically induce.",
keywords = "Defects, Diffusion, Oxygen, Semiconductor surface, Sulfur, TiO2",
author = "Gilliard-AbdulAziz, {Kandis Leslie} and Seebauer, {Edmund G}",
year = "2019",
month = "3",
day = "15",
doi = "10.1016/j.apsusc.2018.11.123",
language = "English (US)",
volume = "470",
pages = "854--860",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO 2 (1 1 0) surface

AU - Gilliard-AbdulAziz, Kandis Leslie

AU - Seebauer, Edmund G

PY - 2019/3/15

Y1 - 2019/3/15

N2 - The kinetics and diffusion mechanism of surface-injected oxygen interstitials (O i ) in TiO 2 (1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the O i reaction-diffusion network. Extended defects, whether incipient or pre-existing, may act as a source or sink for O i . The present work uses a quantitative microkinetic model to describe this diffusion and reaction network based upon isotopic gas-solid exchange experiments. Pertinent outputs from the model determined that the activation barrier for surface injection of O i is 2.4 eV, while dissolution of O i from extended defect is 3.3 eV. The interstitial sequestration mechanism through extended defects leads to kinetic coupling effects that other sequestration mechanisms would not typically induce.

AB - The kinetics and diffusion mechanism of surface-injected oxygen interstitials (O i ) in TiO 2 (1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the O i reaction-diffusion network. Extended defects, whether incipient or pre-existing, may act as a source or sink for O i . The present work uses a quantitative microkinetic model to describe this diffusion and reaction network based upon isotopic gas-solid exchange experiments. Pertinent outputs from the model determined that the activation barrier for surface injection of O i is 2.4 eV, while dissolution of O i from extended defect is 3.3 eV. The interstitial sequestration mechanism through extended defects leads to kinetic coupling effects that other sequestration mechanisms would not typically induce.

KW - Defects

KW - Diffusion

KW - Oxygen

KW - Semiconductor surface

KW - Sulfur

KW - TiO2

UR - http://www.scopus.com/inward/record.url?scp=85057227551&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057227551&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.11.123

DO - 10.1016/j.apsusc.2018.11.123

M3 - Article

AN - SCOPUS:85057227551

VL - 470

SP - 854

EP - 860

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -