Abstract
The kinetics and diffusion mechanism of surface-injected oxygen interstitials (O i ) in TiO 2 (1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the O i reaction-diffusion network. Extended defects, whether incipient or pre-existing, may act as a source or sink for O i . The present work uses a quantitative microkinetic model to describe this diffusion and reaction network based upon isotopic gas-solid exchange experiments. Pertinent outputs from the model determined that the activation barrier for surface injection of O i is 2.4 eV, while dissolution of O i from extended defect is 3.3 eV. The interstitial sequestration mechanism through extended defects leads to kinetic coupling effects that other sequestration mechanisms would not typically induce.
Original language | English (US) |
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Pages (from-to) | 854-860 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 470 |
DOIs | |
State | Published - Mar 15 2019 |
Keywords
- Defects
- Diffusion
- Oxygen
- Semiconductor surface
- Sulfur
- TiO2
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films