@inproceedings{06c872c88ab148d3882a1e10f2f5cacb,
title = "Ellipsometry studies of (μc-Si:H/ZnO) and (μc-Si:H/a-Si:H) interfaces in magnetron sputtering system",
abstract = "We have studied the microstructure of μc-Si:H/ZnO and μc-Si:H/a-Si:H interfaces in reactive magnetron sputtering (RMS) using in situ spectroscopic ellipsometry (SE). For μc-Si:H deposited on ZnO, the real time ellipsometry trajectory shows that there is 20 volume% void apparent inside the first 100 angstroms film. Then the film becomes densified, the initial void layer propagates as a surface layer, and its thickness decreases to 53 angstroms when the bulk film reaches 200 angstroms. Both unhydrogenated and hydrogenated silicon films deposited on ZnO show similar nucleation and coalescence behavior. This indicates that the atomic hydrogen rich plasma under μc-Si growth conditions doesn't reduce the ZnO substrate. For the μc-Si:H/a-Si:H study, we also observe the delayed crystallite nucleation after a approximately 100 angstroms high H content interface layer forms. Part of this layer results from H implanted into the a-Si:H substrate (approximately 45 angstroms deep). The thickness of this interface layer decreases as the crystallite nucleation begins. This is the first direct experimental evidence showing sub-surface μc-Si:H formation.",
author = "Yang, {Y. H.} and M. Katiyar and Abelson, {J. R.} and N. Maley",
year = "1993",
doi = "10.1557/proc-297-25",
language = "English (US)",
isbn = "155899193X",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "25--30",
booktitle = "Amorphous Silicon Technology",
note = "Proceedings of the MRS Spring Meeting ; Conference date: 13-04-1993 Through 16-04-1993",
}