Ellipsometry and X-Ray Photoeiectron Spectroscopy Study of SnO2 Reduction at the Interface With Sputtered A-Si:H

Y. H. Yang, G. F. Feng, M. Katiyar, N. Malev, J. R. Abelson

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Very thin layers of hydrogenated and unhydrogenated amorphous silicon have been deposited on tin oxide substrates under different temperatures and H2partial pressures by dc magnetron sputtering. The deposition processes are monitored by real time in situ eilipsometry. We observe the reduction reaction of the SnO2 exposed to a H- or Si-containing deposition flux in the early stages of film growth by real time eilipsometry. The chemical states of Sn at the a-Si:H (or a-Si)/SnO2 interface have been studied by x-ray photoeiectron spectroscopy (XPS). XPS confirms that a Si flux alone can reduce SnO2 to elemental Sn, and that this reaction is temperature dependent. However, the contribution of Si is secondary to that of H atoms in the reduction reaction.

Original languageEnglish (US)
Pages (from-to)1414-1417
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - Jul 1993

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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