Abstract
An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 430-436 |
| Number of pages | 7 |
| Journal | Electrical Overstress/Electrostatic Discharge Symposium Proceedings |
| State | Published - 2000 |
| Event | Electrical Overstress/Electrostatic Discharge Symposium Proceedings - Anaheim, CA, USA Duration: Sep 26 2000 → Sep 28 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
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