Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies

Yu Wang, Patrick Juliano, Sopan Joshi, Elyse Rosenbaum

Research output: Contribution to journalConference article

Abstract

An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

Original languageEnglish (US)
Pages (from-to)430-436
Number of pages7
JournalElectrical Overstress/Electrostatic Discharge Symposium Proceedings
StatePublished - Dec 1 2000
EventElectrical Overstress/Electrostatic Discharge Symposium Proceedings - Anaheim, CA, USA
Duration: Sep 26 2000Sep 28 2000

ASJC Scopus subject areas

  • Condensed Matter Physics

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