TY - JOUR
T1 - Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies
AU - Wang, Yu
AU - Juliano, Patrick
AU - Joshi, Sopan
AU - Rosenbaum, Elyse
N1 - Funding Information:
This work was supported by grants from the SRC and the EOS/ESD Association.
Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.
AB - An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.
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M3 - Conference article
AN - SCOPUS:0034538959
SN - 0739-5159
SP - 430
EP - 436
JO - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
JF - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
T2 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Y2 - 26 September 2000 through 28 September 2000
ER -