Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Yu Wang; Patrick Juliano; Sopan Joshi; Elyse Rosenbaum

doi:10.1016/S0026-2714(01)00034-8

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Yu Wang, Patrick Juliano, Sopan Joshi, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

Original language	English (US)
Pages (from-to)	1781-1787
Number of pages	7
Journal	Microelectronics Reliability
Volume	41
Issue number	11
DOIs	https://doi.org/10.1016/S0026-2714(01)00034-8
State	Published - Nov 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1016/S0026-2714(01)00034-8

Library availability

Discover UIUC Full Text

Cite this

@article{76a89ec2e67c461eb3ef8ce45390d7ba,

title = "Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits",

abstract = "An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.",

author = "Yu Wang and Patrick Juliano and Sopan Joshi and Elyse Rosenbaum",

note = "Funding Information: This work was supported by grants from the SRC and the EOS/ESD Association.",

year = "2001",

month = nov,

doi = "10.1016/S0026-2714(01)00034-8",

language = "English (US)",

volume = "41",

pages = "1781--1787",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

AU - Wang, Yu

AU - Juliano, Patrick

AU - Joshi, Sopan

AU - Rosenbaum, Elyse

N1 - Funding Information: This work was supported by grants from the SRC and the EOS/ESD Association.

PY - 2001/11

Y1 - 2001/11

N2 - An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

AB - An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

UR - http://www.scopus.com/inward/record.url?scp=0035501282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035501282&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(01)00034-8

DO - 10.1016/S0026-2714(01)00034-8

M3 - Article

AN - SCOPUS:0035501282

SN - 0026-2714

VL - 41

SP - 1781

EP - 1787

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 11

ER -

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this