Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Yu Wang, Patrick Juliano, Sopan Joshi, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

Original languageEnglish (US)
Pages (from-to)1781-1787
Number of pages7
JournalMicroelectronics Reliability
Volume41
Issue number11
DOIs
StatePublished - Nov 1 2001

Fingerprint

circuit protection
SOI (semiconductors)
Diodes
diodes
Networks (circuits)
simulation
SPICE
simulators
high current
Simulators
breakdown
Temperature
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits. / Wang, Yu; Juliano, Patrick; Joshi, Sopan; Rosenbaum, Elyse.

In: Microelectronics Reliability, Vol. 41, No. 11, 01.11.2001, p. 1781-1787.

Research output: Contribution to journalArticle

Wang, Yu ; Juliano, Patrick ; Joshi, Sopan ; Rosenbaum, Elyse. / Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits. In: Microelectronics Reliability. 2001 ; Vol. 41, No. 11. pp. 1781-1787.
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