Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

Yu Wang, Patrick Juliano, Sopan Joshi, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

Original languageEnglish (US)
Pages (from-to)1781-1787
Number of pages7
JournalMicroelectronics Reliability
Volume41
Issue number11
DOIs
StatePublished - Nov 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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