Electrostatic drift effects on near-surface defect distribution in TiO 2

Prashun Gorai, Alice G. Hollister, Edmund G. Seebauer

Research output: Contribution to journalArticle

Abstract

The present work employs a combination of isotopic self-diffusion measurements and diffusion-drift modeling to identify a unique mechanism for defect accumulation in surface space-charge layers of TiO2. During oxygen gas-exchange experiments at elevated temperatures, rutile (110) surfaces inject charged oxygen interstitials into the underlying bulk. Yet near-surface electric fields attract the injected defects back toward the surface, retarding their diffusional migration and leading to longer residence times within the space-charge layers. The extended residence time enhances kick-in reactions, resulting in measureable pile-up of the isotope. Related effects probably generalize to other related semiconductors.

Original languageEnglish (US)
Article number141601
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
StatePublished - Oct 21 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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