Abstract
The present work employs a combination of isotopic self-diffusion measurements and diffusion-drift modeling to identify a unique mechanism for defect accumulation in surface space-charge layers of TiO2. During oxygen gas-exchange experiments at elevated temperatures, rutile (110) surfaces inject charged oxygen interstitials into the underlying bulk. Yet near-surface electric fields attract the injected defects back toward the surface, retarding their diffusional migration and leading to longer residence times within the space-charge layers. The extended residence time enhances kick-in reactions, resulting in measureable pile-up of the isotope. Related effects probably generalize to other related semiconductors.
Original language | English (US) |
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Article number | 141601 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 14 |
DOIs | |
State | Published - Sep 30 2013 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)