The present work employs a combination of isotopic self-diffusion measurements and diffusion-drift modeling to identify a unique mechanism for defect accumulation in surface space-charge layers of TiO2. During oxygen gas-exchange experiments at elevated temperatures, rutile (110) surfaces inject charged oxygen interstitials into the underlying bulk. Yet near-surface electric fields attract the injected defects back toward the surface, retarding their diffusional migration and leading to longer residence times within the space-charge layers. The extended residence time enhances kick-in reactions, resulting in measureable pile-up of the isotope. Related effects probably generalize to other related semiconductors.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Sep 30 2013|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)