Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S. Voldman, P. Juliano, N. Schmidt, R. Johnson, L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, E. Rosenbaum, B. Meyerson

Research output: Contribution to journal › Conference article › peer-review