Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S. Voldman, P. Juliano, N. Schmidt, R. Johnson, L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, E. Rosenbaum, B. Meyerson

Research output: Contribution to journalConference article

Abstract

This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.

Original languageEnglish (US)
Pages (from-to)239-250
Number of pages12
JournalElectrical Overstress/Electrostatic Discharge Symposium Proceedings
StatePublished - Dec 1 2000
EventElectrical Overstress/Electrostatic Discharge Symposium Proceedings - Anaheim, CA, USA
Duration: Sep 26 2000Sep 28 2000

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Voldman, S., Juliano, P., Schmidt, N., Johnson, R., Lanzerotti, L., Joseph, A., Brennan, C., Dunn, J., Harame, D., Rosenbaum, E., & Meyerson, B. (2000). Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors. Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 239-250.