TY - JOUR
T1 - Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
AU - Voldman, S.
AU - Juliano, P.
AU - Schmidt, N.
AU - Johnson, R.
AU - Lanzerotti, L.
AU - Joseph, A.
AU - Brennan, C.
AU - Dunn, J.
AU - Harame, D.
AU - Rosenbaum, E.
AU - Meyerson, B.
PY - 2000
Y1 - 2000
N2 - This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.
AB - This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.
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M3 - Conference article
AN - SCOPUS:0034544872
SN - 0739-5159
SP - 239
EP - 250
JO - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
JF - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
T2 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Y2 - 26 September 2000 through 28 September 2000
ER -