Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S. Voldman; P. Juliano; N. Schmidt; R. Johnson; L. Lanzerotti; A. Joseph; C. Brennan; J. Dunn; D. Harame; E. Rosenbaum; B. Meyerson

Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S. Voldman, P. Juliano, N. Schmidt, R. Johnson, L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, E. Rosenbaum, B. Meyerson

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.

Original language	English (US)
Pages (from-to)	239-250
Number of pages	12
Journal	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
State	Published - 2000
Externally published	Yes
Event	Electrical Overstress/Electrostatic Discharge Symposium Proceedings - Anaheim, CA, USA Duration: Sep 26 2000 → Sep 28 2000

ASJC Scopus subject areas

Condensed Matter Physics

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@article{5f58bf4deeee437b8a89e90277fa7091,

title = "Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors",

abstract = "This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.",

author = "S. Voldman and P. Juliano and N. Schmidt and R. Johnson and L. Lanzerotti and A. Joseph and C. Brennan and J. Dunn and D. Harame and E. Rosenbaum and B. Meyerson",

year = "2000",

language = "English (US)",

pages = "239--250",

journal = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

issn = "0739-5159",

publisher = "ESD Association",

note = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings ; Conference date: 26-09-2000 Through 28-09-2000",

}

TY - JOUR

T1 - Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

AU - Voldman, S.

AU - Juliano, P.

AU - Schmidt, N.

AU - Johnson, R.

AU - Lanzerotti, L.

AU - Joseph, A.

AU - Brennan, C.

AU - Dunn, J.

AU - Harame, D.

AU - Rosenbaum, E.

AU - Meyerson, B.

PY - 2000

Y1 - 2000

N2 - This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.

AB - This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.

UR - http://www.scopus.com/inward/record.url?scp=0034544872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034544872&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034544872

SN - 0739-5159

SP - 239

EP - 250

JO - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

JF - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

T2 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Y2 - 26 September 2000 through 28 September 2000

ER -

Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

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