High-current and electrostatic discharge phenomenon were studied in pseudomorphic epitaxial-base silicon germanium heterojunction bipolar transistors. Transmission line pulse and ESD human body model wafer level reliability testing, failure analysis and simulation showed that SiGe HBTs provide both functional and ESD advantages. They have superior critical-current density-to-failure for short pulse widths and convergence of the SiGe and Si device critical current density at long pulse widths. The low-doped collector region of the SiGe HBT plays a role in the peak temperature reached in the transistor.
|Original language||English (US)|
|Number of pages||7|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - Jan 1 2000|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality