Electronic transport in underdoped YBa 2Cu 3O 7 - δ nanowires: Evidence for fluctuating domain structures

J. A. Bonetti; D. S. Caplan; D. J. Van Harlingen; M. B. Weissman

doi:10.1103/PhysRevLett.93.087002

Electronic transport in underdoped YBa ₂Cu ₃O _{7 - δ} nanowires: Evidence for fluctuating domain structures

J. A. Bonetti, D. S. Caplan, D. J. Van Harlingen, M. B. Weissman

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The transport measurements on nanoscale samples of YB ₂Cu ₃O _7-8 nanowires fabricated with widths of 100-250 nm was discussed. YBa ₂Cu ₃O _7-8 thin films were grown by pulsed laser deposition on LaAlO ₃ substrates. A dc sputtering of carbon layer and a thin gold layer was done to serve as an etching template and to protect the film during processing. Pattering was done by electron beam lithography and and ion beam etching on a liquid nitrogen cooled stage for minimizing film degradation. It was observed that the discrete switching noise in the resistance of the nanowire was in the range of T _c ^*.

Original language	English (US)
Article number	087002
Pages (from-to)	087002-1-087002-4
Journal	Physical review letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.93.087002
State	Published - Aug 20 2004

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.93.087002

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@article{1c28c9d7ec97424baf502a91be224835,

title = "Electronic transport in underdoped YBa 2Cu 3O 7 - δ nanowires: Evidence for fluctuating domain structures",

abstract = "The transport measurements on nanoscale samples of YB 2Cu 3O 7-8 nanowires fabricated with widths of 100-250 nm was discussed. YBa 2Cu 3O 7-8 thin films were grown by pulsed laser deposition on LaAlO 3 substrates. A dc sputtering of carbon layer and a thin gold layer was done to serve as an etching template and to protect the film during processing. Pattering was done by electron beam lithography and and ion beam etching on a liquid nitrogen cooled stage for minimizing film degradation. It was observed that the discrete switching noise in the resistance of the nanowire was in the range of T c *.",

author = "Bonetti, {J. A.} and Caplan, {D. S.} and {Van Harlingen}, {D. J.} and Weissman, {M. B.}",

note = "Funding Information: We thank Eduardo Fradkin and Nigel Goldenfeld for insightful discussions. This work supported by the U.S. Department of Energy, Division of Materials Sciences, under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. One of us (J. A. B.) thanks the Center for Nanoscale Science and Technology at the University of Illinois for support.",

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AU - Van Harlingen, D. J.

AU - Weissman, M. B.

N1 - Funding Information: We thank Eduardo Fradkin and Nigel Goldenfeld for insightful discussions. This work supported by the U.S. Department of Energy, Division of Materials Sciences, under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. One of us (J. A. B.) thanks the Center for Nanoscale Science and Technology at the University of Illinois for support.

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AB - The transport measurements on nanoscale samples of YB 2Cu 3O 7-8 nanowires fabricated with widths of 100-250 nm was discussed. YBa 2Cu 3O 7-8 thin films were grown by pulsed laser deposition on LaAlO 3 substrates. A dc sputtering of carbon layer and a thin gold layer was done to serve as an etching template and to protect the film during processing. Pattering was done by electron beam lithography and and ion beam etching on a liquid nitrogen cooled stage for minimizing film degradation. It was observed that the discrete switching noise in the resistance of the nanowire was in the range of T c *.

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