Electronic transitions associated with small crystalline silicon inclusions within an amorphous silicon host

Daewon Kwon, Chih Chiang Chen, J. David Cohen, Hyun Chul Jin, Eric Hollar, Ian Robertson, John R. Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

Amorphous silicon films were prepared by dc reactive magnetron sputtering under a range of hydrogen or deuterium partial pressures approaching the phase transition to full microcrystallinity. Tunneling electron microscopy imaging indicated that these films consisted of 5–50-nm-sized Si crystallites embedded in an amorphous silicon matrix. The sub-band-gap optical spectra of these films were recorded using photocapacitance and transient photocurrent spectroscopy. These spectra appear to consist of a superposition of a sub-band-gap spectrum typical of amorphous silicon together with a unique optical transition, with a very large optical cross section, corresponding to valence-band electrons being optically inserted into empty levels lying within the amorphous silicon mobility gap. We believe these empty levels are associated with defect states at the crystalline-amorphous boundary.

Original languageEnglish (US)
Pages (from-to)4442-4445
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number7
DOIs
StatePublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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