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Electronic structures of defects and magnetic impurities in MoS
2
monolayers
Shang Chun Lu,
Jean Pierre Leburton
Electrical and Computer Engineering
Coordinated Science Lab
Physics
Micro and Nanotechnology Lab
Beckman Institute for Advanced Science and Technology
Research output
:
Contribution to journal
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Article
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peer-review
Overview
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Dive into the research topics of 'Electronic structures of defects and magnetic impurities in MoS
2
monolayers'. Together they form a unique fingerprint.
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Chemical Compounds
Magnetic Impurity
100%
Impurity Level
81%
Doping Material
49%
Electronic State
41%
Magnetic Transition
40%
Adatoms
34%
Fermi Level
32%
Calorific Value
30%
Magnetic Moment
29%
Metal Atom
27%
Electron Spin
23%
Electronic Property
23%
Transition Element
20%
Density Functional Theory
17%
Engineering & Materials Science
Electronic structure
84%
Impurities
54%
Defects
38%
Valence bands
29%
Conduction bands
27%
Atoms
16%
Adatoms
15%
Fermi level
14%
Density functional theory
12%
Transition metals
11%
Vacancies
10%
Physics & Astronomy
electronic structure
42%
impurities
37%
defects
31%
energy of formation
25%
conduction bands
13%
cells
13%
valence
11%
magnetic metals
11%
adatoms
8%
atoms
8%
transition metals
6%
magnetic moments
6%
density functional theory
6%
electronics
4%